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2N5179 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number 2N5179
Manufacturer Advanced Power Technology
File Size 191.93 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Download 2N5179 Download (PDF)

General Description

: www.DataSheet4U.com The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment.

It is ideal for pre-driver, low noise amplifier, and oscillator applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mW mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER.

Key Features

  • Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.