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2N5179 - HIGH FREQUENCY TRANSISTOR

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2N5179 MAXIMUM RATINGS Rating Collector-Emitter Voltage Applicable 1.0 to 2.0 mAdc Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (a T"a = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Storage Temperature Symbol vCEO Value 12 Unit Vdc vCBO v EBO ic PD Pd Tstg 20 2.5 50 200 1.14 300 1.71 -65 to +200 Vdc Vdc mAdc mW mW/°C mW mW/°C °C CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage C(l = 0.001 mAdc, El = 0) Emitter-Base Breakdown Voltage (lg = 0.