2N5179
2N5179 is HIGH FREQUENCY TRANSISTOR manufactured by Motorola Semiconductor.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Applicable 1.0 to 2.0 mAdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Device Dissipation (a T"a = 25°C
Derate above 25°C Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol vCEO
Value 12
Unit Vdc vCBO v EBO ic
Pd
Tstg
2.5 50 200 1.14 300 1.71
-65 to +200
Vdc
Vdc mAdc mW mW/°C mW mW/°C
°C
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage C(l = 0.001...
