2N5179 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

General Description

The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment.

It is ideal for pre-driver, low noise amplifier, and oscillator applications.

Key Features

Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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2N5179 rf & microwave discrete low power transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	2N5179
Manufacturer	Advanced Power Technology
File Size	191.93 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	2N5179 Datasheet

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Other Datasheets by Advanced Power Technology

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Full PDF Text Transcription (Reference)

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: www.DataSheet4U.com The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.