2N5179 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Product Overview

Advanced Power Technology

Part number	2N5179
Manufacturer	Advanced Power Technology
File Size	191.93 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	2N5179 Datasheet
Additional preview pages of the 2N5179 datasheet.

The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment.

It is ideal for pre-driver, low noise amplifier, and oscillator applications.

Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

2N5179 - Silicon NPN Epitaxial Transistor (STMicroelectronics)
2N5179 - NPN SILICON RF SMALL-SIGNAL TRANSISTOR (Micro Electronics)
2N5179 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
2N5179 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N5170 - SILICON CONTROLLED RECTIFIERS (Motorola Inc)
2N5170 - SILICON CONTROLLED RECTIFIER (Solid State)
2N5170 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
2N5170R - THYRISTORS (ETC)
2N5171 - SILICON CONTROLLED RECTIFIERS (Motorola Inc)
2N5171 - SILICON CONTROLLED RECTIFIER (Solid State)

Other Datasheets by Advanced Power Technology

Published: Jun 4, 2007 |