Microsemi 2N5179
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | 2N5179 |
|---|---|
| Datasheet | 2N5179 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 Characterized with S-Parameters 1. Emitter 2. Base 3. Collector 4. Case TO-72
DESCRIPTION
: Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mWatts mW/ ºC MSC1305.PDF 10-25-99 2N5179ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol VCEO(sus) BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 12 20 2.5 Value Typ.
