Datasheet Details
| Part number | 2N6304 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 126.67 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Download | 2N6304 Download (PDF) |
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| Part number | 2N6304 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 126.67 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Download | 2N6304 Download (PDF) |
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: The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.
www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N6304 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) Value Min.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation |
 |
2N6304 | HIGH FREQUENCY TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |