Datasheet Details
| Part number | 2N6304 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 86.00 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | 2N6304_MicrosemiCorporation.pdf |
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Overview: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER.
| Part number | 2N6304 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 86.00 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | 2N6304_MicrosemiCorporation.pdf |
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: Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1323.PDF 10-25-99 2N6304 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) 15 30 3.5 Value Typ.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6304 | HIGH FREQUENCY TRANSISTOR | Motorola |
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2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Advanced Power Technology |
| Part Number | Description |
|---|---|
| 2N6303 | Silicon PNP Power Transistors |
| 2N6306 | NPN POWER SILICON TRANSISTOR |
| 2N6308 | NPN POWER SILICON TRANSISTOR |
| 2N6338 | NPN POWER SILICON TRANSISTOR |
| 2N6341 | NPN POWER SILICON TRANSISTOR |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6352 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6353 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6383 | NPN DARLINGTON POWER SILICON TRANSISTOR |