Datasheet4U Logo Datasheet4U.com

2N6303 - Silicon PNP Power Transistors

General Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Key Features

  • Silicon PNP Power Transistors.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6303 Power Transistor Crystaloncs
2N6303 Bipolar PNP Device Seme LAB
2N6300 NPN Darlington Power Silicon Transistor VPT
2N6300 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Central Semiconductor
2N6300 PNP DARLINGTON POWER SILICON TRANSISTOR Microsemi

Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N6306 NPN POWER SILICON TRANSISTOR
2N6308 NPN POWER SILICON TRANSISTOR
2N6338 NPN POWER SILICON TRANSISTOR
2N6341 NPN POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N6303 High-Speed Switching Medium-Current Switching High-Frequency Amplifiers Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) FEATURES: • • • • Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.