APT11N80GC3 - Super Junction MOSFET

Advanced Power Technology

Datasheet Details

Part number	APT11N80GC3
Manufacturer	Advanced Power Technology
File Size	111.89 KB
Description	Super Junction MOSFET
Datasheet	APT11N80GC3 Datasheet
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APT11N80GC3 www.DataSheet4U.com 800V 7.4A 0.500Ω Super Junction MOSFET TO-257 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-257 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified. APT11N80GC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 7.4 22.2 ±20 ±30 77 0.62 -55 to 150 260 50 7.4 0.2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

Published: Jun 23, 2010 |