APT11N80BC3 Datasheet | Advanced Power Technology

.. 800V 11A 0.45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - TO-247 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT11N80BC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 800 11 33 ±20 ±30 156 1.25 -55 to 150 260 50 11 0.2 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range...