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APT11N80BC3G

Manufacturer: Inchange Semiconductor

APT11N80BC3G datasheet by Inchange Semiconductor.

APT11N80BC3G datasheet preview

APT11N80BC3G Datasheet Details

Part number APT11N80BC3G
Datasheet APT11N80BC3G-INCHANGE.pdf
File Size 371.87 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
APT11N80BC3G page 2

APT11N80BC3G Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

APT11N80BC3G Key Features

  • Drain Current -ID=11A@ TC=25℃ -Drain Source Voltage

APT11N80BC3G from other manufacturers

View APT11N80BC3G datasheet index

Brand Logo Part Number Description Other Manufacturers
Microsemi Logo APT11N80BC3G Super Junction MOSFET Microsemi
Advanced Power Technology Logo APT11N80BC3 Super Junction MOSFET Advanced Power Technology
Inchange Semiconductor logo - Manufacturer

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