APT11N80BC3G
APT11N80BC3G is Super Junction MOSFET manufactured by Microsemi.
800V 11A 0.45Ω
Super Junction MOSFET
TO-247
- Ultra low RDS(ON)
- Low Miller Capacitance
- Ultra Low Gate Charge, Qg
- Avalanche Energy Rated
- TO-247 Package
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specif ed.
UNIT
VDSS ID IDM VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
800 11 33 ±20 ±30 156 1.25
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec....
