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APT11N80BC3G
800V 11A 0.45Ω
Super Junction MOSFET
TO-247
• Ultra low RDS(ON) • Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated
• TO-247 Package
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specif ed.
APT11N80BC3G
UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
800 11 33 ±20 ±30 156 1.25
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT11N80BC3G Datasheet
