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Advanced Power Technology

APT30M36B2FLL Datasheet Preview

APT30M36B2FLL Datasheet

Power MOSFET

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APT30M36B2FLL
APT30M36LFLL
300V 84A 0.036
POWER MOS 7 R FREDFFERETDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
B2FLL
T-MAX
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT30M36B2FLL_LFLL UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
300
Volts
84
Amps
336
±30
Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
568
4.55
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
84
50
2500
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 42A)
IDSS
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Volts
0.036 Ohms
250
µA
1000
±100 nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT30M36B2FLL Datasheet Preview

APT30M36B2FLL Datasheet

Power MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 150V
ID = 84A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 150V
ID = 84A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 200V, VGS = 15V
ID = 84A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 200V, VGS = 15V
ID = 84A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -84A)
dv/dt
Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -84A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -84A, di/dt = 100A/µs)
Peak Recovery Current
IRRM
(IS = -84A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
APT30M36B2FLL_LFLL
MIN TYP MAX UNIT
6480
1540
pF
75
115
35
nC
45
15
31
ns
29
4
730
765
µJ
855
845
MIN TYP MAX UNIT
84 Amps
336
1.3 Volts
8
V/ns
240
ns
500
1.1
µC
5.2
12
Amps
22
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.22
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.71mH, RG = 25, Peak IL = 84A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID84A di/dt 700A/µs VR 300 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
0.20
0.9
0.7
0.15
0.5
Note:
0.10
0.3
0.05
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT30M36B2FLL
Description Power MOSFET
Maker Advanced Power Technology
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