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Advanced Power Technology

APT33GF120HR Datasheet Preview

APT33GF120HR Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs

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APT33GF120HR
1200V 38A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• Hermetic Package
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
TO-258
C
EG
G
C
E
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VCES
VCGR
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
Parameter
APT33GF120HR
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
YGate-Emitter Voltage
RContinuous Collector Current @ TC = 25°C
AContinuous Collector Current @ TC = 90°C
INPulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
IMSingle Pulse Avalanche Energy 2
LTotal Power Dissipation
EOperating and Storage Junction Temperature Range
PRMax. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
±20
38
33
76
66
65
205
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA)
Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
mA
nA
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61




Advanced Power Technology

APT33GF120HR Datasheet Preview

APT33GF120HR Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs

No Preview Available !

DYNAMIC CHARACTERISTICS
APT33GF120HR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
1850
200
110
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
165
20
100
Turn-on Delay Time
Resistive Switching (25°C)
30
Rise Time
Turn-off Delay Time
VGE = 15V
VCC = 0.8VCES
IC = IC2
140
150
Fall Time
Turn-on Delay Time
YRise Time
RTurn-off Delay Time
AFall Time
INTurn-on Switching Energy
Turn-off Switching Energy
IMTotal Switching Losses
LTurn-on Delay Time
ERise Time
PRTurn-off Delay Time
RG = 10W
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
200
28
60
280
30
3.0
3.0
6.0
28
70
250
Fall Time
RG = 10W
25
Total Switching Losses
TJ = +25°C
5.0
Forward Transconductance
VCE = 20V, IC = IC2
8.5 20
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol Characteristic
RQJC
RQJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.61
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, RGE = 25W, L = 119µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT33GF120HR
Description The Fast IGBT is a new generation of high voltage power IGBTs
Maker Advanced Power Technology
Total Page 2 Pages
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