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Advanced Power Technology

APT4020BVFR Datasheet Preview

APT4020BVFR Datasheet

POWER MOS V FREDFET

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400V 23A 0.20
APT4020BVFR APT4020SVFR
APT4020BVFRG* APT4020SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
SVFR
www.DataSheet4FUa.csomter Switching
• Avalanche Energy Rated
D
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
• TO-247 or Surface Mount D3Pak
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT4020B_SVFR(G)
400
23
92
±30
±40
250
2
-55 to 150
300
23
30
960
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
400
23
2
0.20
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts




Advanced Power Technology

APT4020BVFR Datasheet Preview

APT4020BVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
t d(on)
tr
Turn-on Delay Time
Rise Time
td(off) Turn-off Delay Time
t f Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 23A @ 25°C
VGS = 15V
VDD = 200V
ID = 23A @ 25°C
RG = 1.6
www.DataSheeSt4OUU.coRmCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -23A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr (IS = -23A, di/dt = 100A/µs)
IRRM
Peak Recovery Current
(IS = -23A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT4020B_SVFR(G)
MIN TYP MAX UNIT
2650
400 pF
180
120
16 nC
60
10
11
ns
38
7
MIN TYP MAX UNIT
23
Amps
92
1.3 Volts
15 V/ns
?
ns
?
?
µC
?
?
Amps
?
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.50
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.63mH, RG = 25, Peak IL = 23A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID[Cont.] di/dt 700A/µs VR VDSS TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT4020BVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
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