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Advanced Power Technology

APT40N60JCU2 Datasheet Preview

APT40N60JCU2 Datasheet

ISOTOP Boost chopper Super Junction MOSFET Power Module

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APT40N60JCU2
ISOTOP® Boost chopper
Super Junction
MOSFET Power Module
VDSS = 600V
RDSon = 70mW max @ Tj = 25°C
ID = 40A @ Tc = 25°C
www.DataSheet4U.com
K
D
G
S
S
G
K
D
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
· Brake switch
Features
·
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
· ISOTOP® Package (SOT-227)
· Very low stray inductance
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
ISOTOPÒ
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFAV
IFRMS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 80°C
Max ratings
600
40
30
120
±20
70
290
20
1
1800
30
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Unit
V
A
V
mW
W
A
mJ
A
APT website – http://www.advancedpower.com
1–8




Advanced Power Technology

APT40N60JCU2 Datasheet Preview

APT40N60JCU2 Datasheet

ISOTOP Boost chopper Super Junction MOSFET Power Module

No Preview Available !

APT40N60JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS
IDSS
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0V, ID = 250µA
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
600
V
25
250
µA
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 20A
VGS = VDS, ID = 1mA
VGS = ±20 V, VDS = 0V
70 mW
2.1 3 3.9 V
±100 nA
www.DataSheeDt4Uy.ncoammic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 40A
Resistive Switching
VGS = 15V
VBus = 380V
ID = 40A
RG = 1.8W
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5
Min Typ Max Unit
7015
2565
pF
212
259
29 nC
111
20
30 ns
115
10
670
µJ
980
1100
1206
µJ
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–8


Part Number APT40N60JCU2
Description ISOTOP Boost chopper Super Junction MOSFET Power Module
Maker Advanced Power Technology
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