APT47N60BC3 Datasheet | Advanced Power Technology

APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω D3PAK Super Junction MOSFET TO-247 C O OLMOS Power Semiconductors - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg .. - Avalanche Energy Rated - TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT47N60BC3_SC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 600 47 141 ±20 ±30 417 3.33 -55 to 150 260 50 20 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps m J IAR EAR EAS Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance UNIT Volts 600 0.06 0.5 0.07 25 250 ±100 2.10 3 3.9 (VGS = 10V, ID = 30A) Ohms µA n A Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7m A) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://.advancedpower....