APT47N60HC3 Datasheet | Advanced Power Technology

.. 600V 33.5A 0.080Ω Super Junction MOSFET TO-258 C O OLMOS Power Semiconductors - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - Hermetic TO-258 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT47N60HC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 600 33.5 100.5 ±20 ±30 240 1.92 -55 to 150 260 50 20 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction...