APT47N60HC3 Overview
.. 600V 33.5A 0.080Ω Super Junction MOSFET Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-258 Package dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified. 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 33.5A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 6 6 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC