APTM100H45SCT Description
APTM100H45SCT Full bridge Series & SiC parallel diodes VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q3 MOSFET Power Module VBUS CR1A CR3A Q1 CR1B CR3B G1.
APTM100H45SCT Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance