Power MOS 7® MOSFETs
- Low RDSon
G1 G3 - Low input and Miller capacitance
S1 OUT1 OUT2 S3 - Low gate charge
CR2A
CR4A
- Avalanche energy rated
Q2 CR2B CR4B
Q4.
Parallel SiC Schottky Diode - Zero reverse recovery
- Zero forward recovery
G2 S2
G4 S4
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
NTC1
0/VBUS
NTC2.
Full PDF Text Transcription for APTM100H45SCTG (Reference)
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APTM100H45SCTG. For precise diagrams, and layout, please refer to the original PDF.
APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application • Motor control VB...
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mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application • Motor control VBUS • Switched Mode Power Supplies • Uninterruptible Power Supplies CR1A CR3A Features Q1 CR1B CR3B Q3 • Power MOS 7® MOSFETs - Low RDSon G1 G3 - Low input and Miller capacitance S1 OUT1 OUT2 S3 - Low gate charge CR2A CR4A - Avalanche energy rated Q2 CR2B CR4B Q4 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery G2 S2 G4 S4 - Temperature Independent switching behavior - Positive temperature coefficient on VF NTC1 0/VBUS NTC2 • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power
APTM100H45SCTG Datasheet
