APTM100H45SCT Datasheet | Advanced Power Technology

Features - Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Parallel Si C Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 .. - - - - G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile Max ratings 1000 18 14 72 ±30 450 357 18 50 2500 Unit V A V mΩ W A m J June, 2004 1- 7 APTM100H45SCT - Rev 1 Absolute maximum...