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MRF559 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number MRF559
Manufacturer Advanced Power Technology
File Size 135.19 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Download MRF559 Download (PDF)

General Description

: Designed primarily for wideband large signal stages in the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 Unit Vdc Vdc Vdc mA 2.0 20 -65 to +150 Watts mW/ ºC ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal.

Key Features

  • Specified @ 12.5 V, 870 MHz Characteristics.
  • Output Power = .5 W.
  • Minimum Gain = 8.0 dB.
  • Efficiency 50%.
  • Cost Effective Macro X Package.
  • Electroless Tin Plated Leads for Improved Solderability Macro X.