Microsemi MRF559
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
FEATURES
● Specified @ 12.5 V, 870 MHz Characteristics● Output Power = .5 W
● Minimum Gain = 8.0 dB
● Efficiency 50%
● Cost Effective Macro X Package
● Electroless Tin Plated Leads for Improved Solderability Macro X
DESCRIPTION
: Designed primarily for wideband large signal stages in the UHF frequency range.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 2.0 20 -65 to +150 Unit Vdc Vdc Vdc mA Watts mW/ ºC ºC MSC1317.PDF 10-25-99 MRF559ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCEO BVCBO BVEBO ICES (on) HFE Collector-Emitter Breakd