MRF559 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

General Description

Designed primarily for wideband large signal stages in the UHF frequency range.

Key Features

Specified @ 12.5 V, 870 MHz Characteristics.
Output Power = .5 W.
Minimum Gain = 8.0 dB.
Efficiency 50%.
Cost Effective Macro X Package.
Electroless Tin Plated Leads for Improved Solderability Macro X.

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MRF559 rf & microwave discrete low power transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	MRF559
Manufacturer	Advanced Power Technology
File Size	135.19 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF559 Datasheet

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Other Datasheets by Advanced Power Technology

Part Number	Description
MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 Unit Vdc Vdc Vdc mA 2.