Advanced Power Technology MRF559
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | MRF559 |
|---|---|
| Datasheet | MRF559 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Specified @ 12.5 V, 870 MHz Characteristics● Output Power = .5 W
● Minimum Gain = 8.0 dB
● Efficiency 50%
● Cost Effective Macro X Package
● Electroless Tin Plated Leads for Improved Solderability Macro X
DESCRIPTION
: Designed primarily for wideband large signal stages in the UHF frequency range.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 Unit Vdc Vdc Vdc mA 2.0 20 -65 to +150 Watts mW/ ºC ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct.
