Datasheet4U Logo Datasheet4U.com

MRF5812G Datasheet - Advanced Power Technology

Bipolar Junction Transistor

MRF5812G General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D To.

MRF5812G Datasheet (147.36 KB)

Preview of MRF5812G PDF

Datasheet Details

Part number:

MRF5812G

Manufacturer:

Advanced Power Technology

File Size:

147.36 KB

Description:

Bipolar junction transistor.

📁 Related Datasheet

MRF5812 NPN Silicon RF Microwave Transistor (ASI)

MRF5812 Bipolar Junction Transistor (Advanced Power Technology)

MRF581 NPN SILICON RF TRANSISTOR (ASI)

MRF581 HIGH FREQUENCY TRANSISTOR (Motorola)

MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)

MRF581 RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)

MRF5811LT1 NPN Silicon High Frequency Transistor (Motorola)

MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)

MRF581A RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)

MRF581AG RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)

TAGS

MRF5812G Bipolar Junction Transistor Advanced Power Technology

Image Gallery

MRF5812G Datasheet Preview Page 2 MRF5812G Datasheet Preview Page 3

MRF5812G Distributor