• Part: MRF5812G
  • Description: Bipolar Junction Transistor
  • Manufacturer: Advanced Power Technology
  • Size: 147.36 KB
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Datasheet Summary

MRF5812, R1, R2 MRF5812G, R1, R2 - G Denotes RoHS pliant, Pb free Terminal Finish Features - - - - Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix- Tape and Reel, 500 units R2 suffix- Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0...