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MRF5812G - Bipolar Junction Transistor

Download the MRF5812G datasheet PDF. This datasheet also covers the MRF5812 variant, as both devices belong to the same bipolar junction transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features

  • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5812_AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF5812G
Manufacturer Advanced Power Technology
File Size 147.36 KB
Description Bipolar Junction Transistor
Datasheet download datasheet MRF5812G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.
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