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MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
PACKAGE STYLE SO-8
FEATURES:
• Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21|
TC = 25 °C
NONETEST CONDITIONS
IC = 1.0 mA IC = 5.0 mA IE = 0.1 mA VCB = 15 V VCE = 2.0 V VCE = 5.0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.0 MHz f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
30 15 2.5 0.1 0.1 50 1.4 5.0 2.0 13 3.0 200 2.0
UNITS
V V V mA mA --pF GHz dB % dB dB dB
VCE = 10 V
IC = 50 mA
f = 500 MHz
15.5 17.
MRF5812 Datasheet
