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MRF5812 Datasheet PDF

ASI MRF5812

MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
Part No. MRF5812
Datasheet MRF5812 Download
Manufacturer
ASI
Description NPN Silicon RF Microwave Transistor
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MRF5812 datasheet page 1 preview

DESCRIPTION

: The ASI PACKAGE STYLE SO-8

FEATURES

:
● Low Noise – 2.5 dB @ 500 MHz
● Ftau – 5.0 GHz @ 10 V, 75 mA
● Cost Effective SO-8 package

MAXIMUM RATINGS

IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21| TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 0.1 mA VCB = 15 V VCE = 2.0 V VCE = 5.0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 30 15 2.5 0.1 0.1 50 1.4 5.0 2.0 13 3.0 200 2.0 UNITS V V V mA mA --pF GHz dB % dB dB dB VCE = 10 V IC = 50 mA f = 500 MHz 15.5 17.8 20 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1