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MRF5812G - Bipolar Junction Transistor

This page provides the datasheet information for the MRF5812G, a member of the MRF5812 Bipolar Junction Transistor family.

Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features

  • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

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Datasheet preview – MRF5812G

Datasheet Details

Part number MRF5812G
Manufacturer Advanced Power Technology
File Size 147.36 KB
Description Bipolar Junction Transistor
Datasheet download datasheet MRF5812G Datasheet
Additional preview pages of the MRF5812G datasheet.

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Full PDF Text Transcription

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MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.
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