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MRF5812G Datasheet Bipolar Junction Transistor

Manufacturer: Advanced Power Technology

Download the MRF5812G datasheet PDF. This datasheet also includes the MRF5812 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF5812_AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF5812G
Manufacturer Advanced Power Technology
File Size 147.36 KB
Description Bipolar Junction Transistor
Download MRF5812G Download (PDF)

General Description

: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005 www.DataSheet4U.com MRF5812, R1, R2 MRF5812G, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) Value Min.

Overview

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal.

Key Features

  • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

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