MRF5812G

Manufacturer: Advanced Power Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MRF5812G
Datasheet	MRF5812G MRF5812 Datasheet (PDF)
File Size	147.36 KB
Manufacturer	Advanced Power Technology
Description	Bipolar Junction Transistor

MRF5812G Overview

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advanced Power Technology reserves the right to change, without...

MRF5812G Key Features

Low Noise
2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau
5.0 GHz @ 10v, 75mA Cost Effective SO-8 package

MRF5812 from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	MRF5812	NPN Silicon RF Microwave Transistor	ASI

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Datasheet Details

MRF5812G Overview

MRF5812G Key Features

MRF5812 from other manufacturers

More Datasheets from Advanced Power Technology

MRF5812G Distributor