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MRF5812

Manufacturer: Advanced Power Technology
MRF5812 datasheet preview

Datasheet Details

Part number MRF5812
Datasheet MRF5812_AdvancedPowerTechnology.pdf
File Size 147.36 KB
Manufacturer Advanced Power Technology
Description Bipolar Junction Transistor
MRF5812 page 2 MRF5812 page 3

MRF5812 Overview

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advanced Power Technology reserves the right to change, without...

MRF5812 Key Features

  • Low Noise
  • 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau
  • 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package

MRF5812 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ASI Logo MRF5812 NPN Silicon RF Microwave Transistor ASI
Advanced Power Technology logo - Manufacturer

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