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MRF5812 Datasheet Bipolar Junction Transistor

Manufacturer: Advanced Power Technology

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Datasheet Details

Part number MRF5812
Manufacturer Advanced Power Technology
File Size 147.36 KB
Description Bipolar Junction Transistor
Download MRF5812 Download (PDF)

General Description

: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005 www.DataSheet4U.com MRF5812, R1, R2 MRF5812G, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) Value Min.

Overview

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal.

Key Features

  • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix.
  • Tape and Reel, 500 units R2 suffix.
  • Tape and Reel, 2500 units.

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