Advanced Power Technology MSC4001
The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range.| Part No. | MSC4001 |
|---|---|
| Datasheet | MSC4001 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF AND MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
MSC4001FEATURES
● 3:1 VSWR AT RATED CONDITIONS● HERMETIC STRIPAC® PACKAGE
● POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz
DESCRIPTION
:ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C) Symbol Parameter PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Value 7.0 0.25 30 +200 -65 to +200 25 Unit W A V °C °C °C/W Advanced Power Technology re
