2SC1971 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.

Advanced Semiconductor

Datasheet Details

Part number	2SC1971
Manufacturer	Advanced Semiconductor
File Size	80.91 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	2SC1971 Datasheet
Additional preview pages of the 2SC1971 datasheet.

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Full PDF Text Transcription

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2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V 12.5 W @ TC = 25 °C -55 °C to +150 °C 10 °C/W 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE C IC = 50 mA IC = 10 mA TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 17 35 4.0 500 500 UNITS V V V µA µA --pF dB % W IE = 5.0 mA VCES = 25 V VEB = 3.0 V VCE = 10 V V = 30 V PIN = 0.6 W IC = 100 mA f = 1.0 MHz f =175 MHz 10 50 15 180 CB OB www.DataSheet4U.

Published: Mar 28, 2011 |