2SC1971 datasheet by Inchange Semiconductor.
| Part number | 2SC1971 |
|---|---|
| Datasheet | 2SC1971_InchangeSemiconductor.pdf |
| File Size | 217.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC1971 | NPN Transistor | Mitsubishi Electric Semiconductor |
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2SC1971 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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