Datasheet Details
| Part number | 2SC1971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC1971_InchangeSemiconductor.pdf |
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Overview: .. INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | 2SC1971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC1971_InchangeSemiconductor.pdf |
|
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·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W;
VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1971 | NPN Transistor | Mitsubishi Electric Semiconductor |
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2SC1971 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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