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2SC1972 Datasheet PDF

Eleflow 2SC1972

2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Part No. 2SC1972
Datasheet 2SC1972 Download
Manufacturer Eleflow
Description silicon NPN epitaxial planar type transistor
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2SC1972 datasheet page 1 preview

DESCRIPTION

The Eleflow

FEATURES

● High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
● Emitter ballasted construction for reliability and performance.
● Manufactured incorporating recyclable RoHS compliant materials.
● Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz. Application 10 to 14 watts output power amplifier applications within the VHF band. TO-220 Package

ABSOLUTE MAXIMUM RATINGS

(Tc = 25°C unless otherwise specified) Symbol Vcbo Vebo Veco Ic Pc Tj Tstg Rth-a Rth-c Parameter Collector to base voltage Emitter to base voltage Collector to emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Thermal resistance Junction to ambient Junction to case Conditions Ratings 35 4 17 3.5 1.5 25 175 -55 to 175 100 6 Unit V V V A W W °C °C °C/W °C/W Rbe = Ta = 25°C Tc = 25°C Note: Above parameters are guaranteed independently

ELECTRICAL CHARACTERISTICS

(Tc = 25°C unless o...
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