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2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
• • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
IC VCBO PDISS TSTG θJC 3.5 A 35 V 25 W @ TC = 25 °C -55 °C to +175 °C 6.0 °C/W
1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO IEBO hFE ηC POUT IC = 50 mA IC = 10 mA IE = 10 mA
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
17 35 4.0 100 500
UNITS
V V V µA µA --% W
VCES = 25 V VEB = 3.0 V VCE = 10 V VCC = 13.5 V IC = 100 mA PIN = 2.
2SC1972 Datasheet
