Datasheet Details
| Part number | 2SC1970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC1970_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1970.
| Part number | 2SC1970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.18 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC1970_InchangeSemiconductor.pdf |
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·High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W;
VCC= 13.5V ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.6 A 5 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 125 ℃/W Rth j-c Thermal Resistance,Junction to Case 25 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Part Number | Description |
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