Datasheet4U Logo Datasheet4U.com

ALN64535 - NPN SILICON LOW NOISE RF TRANSISTOR

General Description

The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.

📥 Download Datasheet

Datasheet Details

Part number ALN64535
Manufacturer Advanced Semiconductor
File Size 50.05 KB
Description NPN SILICON LOW NOISE RF TRANSISTOR
Datasheet download datasheet ALN64535 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ALN0070 Internally Matched LNA Module ASB
ALN0070WT Internally Matched LNA ASB
ALN0071 Internally Matched LNA Module ASB
ALN0071WT Internally Matched LNA Module ASB
ALN0667WT Internally Matched LNA ASB

Other Datasheets by Advanced Semiconductor

Part Number Description
ALN68135 NPN SILICON LOW NOISE RF TRANSISTOR
ALN0098 Internally Matched LNA Module
ALN0140WT Internally Matched LNA Module
ALN0195AT Internally Matched LNA Module
ALN0196AT Internally Matched LNA Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ALN64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S212 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O O O -65 C to +200 C -65 C to +150 C 85 C/W TC = 25 C O O 1 = Base 2 & 4 = Emitter 3 = Collector CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21 NF GA 2 TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 100 1.0 50 250 0.