ALN68135 Datasheet | Advanced Semiconductor

.. NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN68135 is a mon Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. Features INCLUDE: - NF = 1.6 d B Typical @ 2 GHz -  S212 = 12 d B Typical @ 2 GHz - Replacement for NE68135 PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 40 m A 20 V 12 V 1.5 V 290 m W @ TA ≤ 25 C -65 C to +200 C -65 C to +150 C 600 C/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL ICBO IEBO h FE COB ft S21 NF GA TC = 25 C TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V VCE = 8.0 V VCE = 8 V IC = 20 m A IC = 20 m A IC = 7.0 m A f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 m A MINIMUM TYPICAL MAXIMUM 200 1.0 50 0.2 8.0 9 11 9.0 11 1.6 12 2.3 250 0.7 UNITS n A µA --p F GHz d B d B A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818)...