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ALN68135 - NPN SILICON LOW NOISE RF TRANSISTOR

Description

The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.

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Datasheet Details

Part number ALN68135
Manufacturer Advanced Semiconductor
File Size 46.06 KB
Description NPN SILICON LOW NOISE RF TRANSISTOR
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www.DataSheet4U.com ALN68135 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S212 = 12 dB Typical @ 2 GHz • Replacement for NE68135 PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O 40 mA 20 V 12 V 1.5 V 290 mW @ TA ≤ 25 C O -65 C to +200 C -65 C to +150 C 600 C/W O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL ICBO IEBO hFE COB ft S21 NF GA 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V VCE = 8.0 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 7.0 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 200 1.0 50 0.
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