ALN64535 Datasheet | Advanced Semiconductor

.. NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN64535 is a mon Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. Features INCLUDE: - NF = 1.6 d B Typical @ 2 GHz -  S212 = 11 d B Typical @ 2 GHz - Hermetic Ceramic Package PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 m A 25 V 12 V 1.5 V 300 m W @ TA ≤ 75 C -65 C to +200 C -65 C to +150 C 85 C/W TC = 25 C 1 = Base 2 & 4 = Emitter 3 = Collector CHARACTERISTICS SYMBOL ICBO IEBO h FE CCB ft S21 NF GA TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 m A IC = 20 m A IC = 10 m A f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 m A MINIMUM TYPICAL MAXIMUM 100 1.0 50 250 0.6 8.0 10 10 8.5 11 1.6 11 2.5 UNITS n A µA --p F GHz d B d B A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818)...