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ALN68135
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz • S212 = 12 dB Typical @ 2 GHz • Replacement for NE68135
PACKAGE STYLE SS35
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC
O O
40 mA 20 V 12 V 1.5 V 290 mW @ TA ≤ 25 C
O
-65 C to +200 C -65 C to +150 C 600 C/W
O O
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE COB ft S21 NF GA
2
TC = 25 C
O
TEST CONDITIONS
VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V VCE = 8.0 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 7.0 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA
MINIMUM TYPICAL MAXIMUM
200 1.0 50 0.
ALN68135 Datasheet
