ASI3005 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.

Key Features

PG = 4.5 dB min. at 5 W / 3,000 MHz.
Hermetic Microstrip Package.
Omnigold™ Metalization System DIM A L G H J F I K M NP.

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ASI3005 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	ASI3005
Manufacturer	Advanced Semiconductor
File Size	47.01 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	ASI3005 Datasheet

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ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER www.DataSheet4U.com FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC O O B C D E F .255 / 6.48 .132 / 3.35 700 mA 30 V 17.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 8.5 C/W O O O O .117 / 2.97 G H I J K L M N P .