Datasheet Summary
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SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21
Features
INCLUDE:
- High Tuning Ratio, ∆CT = 8.5 MIN.
- High Quality Factor, Q = 300 MIN. CP = .20 pF
- Hermetic Pkg, LS = .42 nH
MAXIMUM RATINGS
IF VR PDISS TJ TSTG θJC
200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W
NONE
CHARACTERISTICS
SYMBOL
VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA
TC = 25 C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
120 1.0 100 f = 1.0 MHz f = 1.0 MHz...