AT12017-21
AT12017-21 is SILICON ABRUPT VARACTOR DIODE manufactured by Advanced Semiconductor.
DESCRIPTION
:
The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES
INCLUDE:
- High Tuning Ratio, ∆CT = 9.5 MIN.
- High Quality Factor, Q = 300 MIN.
- Hermetic Package, CP = .20 p F LS = .42 n H
MAXIMUM RATINGS
IF VR PDISS TJ TSTG θJC
200 m A 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W
CHARACTERISTICS
SYMBOL
VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 m A VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 m A
TC = 25 C
NONE
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
1.0 100
UNITS
V V µA p F ----- f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz
20 9.0 300
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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