AT12015-21 Datasheet | Advanced Semiconductor

DESCRIPTION : The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: - High Tuning Ratio, ∆CT = 8.5 MIN. - High Quality Factor, Q = 300 MIN. CP = .20 p F - Hermetic Pkg, LS = .42 n H MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC 200 m A 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 m A VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 m A TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 120 1.0 100 f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz 12 8.5 300 UNITS V V n A p F ----Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818) 982-1200 - FAX (818) 765-3004 Specifications are subject to change without notice. REV....