HF30-28S - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI HF30-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A

Key Features

PG = 20 dB min. at 30 W/30 MHz.
IMD3 = -30 dBc max. at 30 W (PEP).
Omnigold™ Metalization System B C E ØC E B H I J D.

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HF30-28S npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	HF30-28S
Manufacturer	Advanced Semiconductor
File Size	17.88 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	HF30-28S Datasheet

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HF30-28F	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 2.9 OC/W O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.