Advanced Semiconductor HF30-28F
HF30-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 20 dB min.| Part No. | HF30-28F |
|---|---|
| Datasheet | HF30-28F Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI at 30 W/30 MHz● IMD3 = -30 dBc max. at 30 W (PEP)
● Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.9 OC/W O O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm G H I MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10604 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP ηC IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 10 1.0 UNITS V V V V mA mA --pF dB % IC = 500 mA f = 1.0 MHz PIN = 7.0 W f = 175 MHz 5 200 65 7.6 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.