• Part: HF30-28F
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 18.33 KB
Download HF30-28F Datasheet PDF
Advanced Semiconductor
HF30-28F
DESCRIPTION : The ASI HF30-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES : - PG = 20 d B min. at 30 W/30 MHz - IMD3 = -30 d Bc max. at 30 W (PEP) - Omnigold™ Metalization System Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.9 OC/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10604 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO h FE COB GP ηC IC = 10 m A IC = 200 m A IC = 200 m A IE = 10 m A VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 10 1.0 UNITS V V V V m A m A --p F d B % IC = 500 m A f =...