• Part: HF30-28S
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 17.88 KB
Download HF30-28S Datasheet PDF
Advanced Semiconductor
HF30-28S
DESCRIPTION : The ASI HF30-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES : - PG = 20 d B min. at 30 W/30 MHz - IMD3 = -30 d Bc max. at 30 W (PEP) - Omnigold™ Metalization System ØC MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC #8-32 UNC-2A F E 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 2.9 OC/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10605 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES ICBO h FE COB GP ηC IC = 10 m A IC = 200 m A IC = 200 m A IE = 10 m A VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 ------------10 1.0 200 65 --- UNITS V V V V m A m A --p F d B % IC =...