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MRF422MP - NPN SILICON RF POWER TRANSISTOR

Download the MRF422MP datasheet PDF. This datasheet also covers the MRF422 variant, as both devices belong to the same npn silicon rf power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications.

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Note: The manufacturer provides a single datasheet file (MRF422_AdvancedSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF422MP
Manufacturer Advanced Semiconductor
File Size 16.60 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet MRF422MP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF422 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. MAXIMUM RATINGS I 20 A V PDISS TJ TSTG θJC 40 V 290 W @ TC = 25 OC -65 OC to +150 OC -65 OC to +150 OC 0.6 OC/W PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 200 mA BVCES IC = 100 mA BVCBO IC = 100 mA BVEBO IE = 10 mA ICES VCE = 28 V hFE VCE = 5.0 V IC = 5.0 A MINIMUM TYPICAL MAXIMUM 35 85 85 3.0 20 10 30 120 UNITS V V V V mA --- Cob VCB = 28 V f = 1.0 MHz 420 pF Pout GPE η IMD VCE = 28 V VCC = 28 V IC(max) = 6.
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