MRF422 Datasheet | MACOM Technology Solutions

RF Line NPN Silicon Power Transistor 150 W (PEP), 30 MHz, 28 V Features - Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% - Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min.) - 100% tested for load mismatch at all phase angles with 30:1 VSWR Description Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz. Rev. V2 CASE 211- 11, STYLE 1 Electrical Characteristics: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0 Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 Emitter-Base Breakdown...