Datasheet4U Logo Datasheet4U.com

MRF422 Datasheet Rf Line NPN Silicon Power Transistor

Manufacturer: MACOM Technology Solutions

Overview: RF Line NPN Silicon Power Transistor 150 W (PEP), 30 MHz, 28.

General Description

Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz.

MRF422 Rev.

V2 CASE 211–11, STYLE 1 Electrical Characteristics: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0 Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 Emitter-Base Breakdown Voltage IE = 10 mA, IC = 0 Collector Cutoff Current VCE = 28 V, VBE = 0, TC = 25°C ON Characteristics DC Current Gain IC = 5 A, VCE = 5 V DYNAMIC Characteristics Output Capacitance VCB = 28 V, IE = 0, 1 MHz Units Min.

Key Features

  • Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40%.
  • Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min. ).
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR.

MRF422 Distributor