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MRF422 - RF Line NPN Silicon Power Transistor

General Description

Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz.

Rev.

11, STYLE 1 Electrical Characteristics: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0

Key Features

  • Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40%.
  • Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min. ).
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Line NPN Silicon Power Transistor 150 W (PEP), 30 MHz, 28 V Features • Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min.) • 100% tested for load mismatch at all phase angles with 30:1 VSWR Description Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz. MRF422 Rev.