MACOM Technology Solutions MRF422
RF Line NPN Silicon Power Transistor
| Part No. | MRF422 |
|---|---|
| Datasheet | MRF422 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | RF Line NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40%● Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min.)
● 100% tested for load mismatch at all phase angles with 30:1 VSWR
DESCRIPTION
Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz. MRF422 Rev. V2 CASE 211–11, STYLE 1ELECTRICAL CHARACTERISTICS
: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0 Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 Emitter-Base Breakdown Voltage IE = 10 mA, IC = 0 Collector Cutoff Current VCE = 28 V, VBE = 0, TC = 25°C ON Characteristics DC Current Gain IC = 5 A, VCE = 5 V DYNAMIC Characteristics Output Capacitance VCB = 28 V, IE = 0, 1 MHz Units Min. Typ. Max. V 35 85 — — V 85 — — V 3 — — mA — — 20 — 15 30 120 pF — 420 — 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
