The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MRF422
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications.
MAXIMUM RATINGS
I 20 A
V PDISS
TJ TSTG θJC
40 V 290 W @ TC = 25 OC
-65 OC to +150 OC -65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER
NONE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 100 mA
BVCBO
IC = 100 mA
BVEBO
IE = 10 mA
ICES VCE = 28 V
hFE
VCE = 5.0 V
IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
35 85 85 3.0
20 10 30 120
UNITS
V V V V mA ---
Cob VCB = 28 V
f = 1.0 MHz
420
pF
Pout
GPE η
IMD
VCE = 28 V
VCC = 28 V IC(max) = 6.
MRF422 Datasheet
