Datasheet Summary
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.
PACKAGE STYLE .205 4L STUD
Features
:
- Pg = 9.0 dB min. @ 900 MHz
- P1dB = 2.0 Watts min. at 900 MHz
- Omnigold™ Metalization System
MAXIMUM RATINGS
VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W
°
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG ηC
TC = 25 °C
NONETEST CONDITIONS
IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V POUT = 2.0 V IC = 100 mA f = 1.0 MHz f = 900 MHz
MINIMUM TYPICAL...