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MRF890 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.

Features

  • Pg = 9.0 dB min. @ 900 MHz.
  • P1dB = 2.0 Watts min. at 900 MHz.
  • Omnigold™ Metalization System B.

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Datasheet Details

Part number MRF890
Manufacturer Advanced Semiconductor
File Size 180.26 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet MRF890 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MRF890 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .205 4L STUD C E E FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz • Omnigold™ Metalization System B MAXIMUM RATINGS VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V POUT = 2.0 V IC = 100 mA f = 1.0 MHz f = 900 MHz MINIMUM TYPICAL MAXIMUM 30 55 4.0 500 10 100 2.0 9.0 55 UNITS V V V µA --pF dB % ww.DataSheet4U.
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