MSC81250M
MSC81250M is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz.
PACKAGE STYLE .400 2NL FLG
2X B C F Ø D 4 x .0 6 2 x 4 5 ° A .0 2 5 x 4 5 °
2 3
G H I J K
Features
:
- Internal Input/Output Matching Networks
- PG = 6.2 d B at 250 W/1150 MHz
- Omnigold™ Metalization System
P M D IM A B M IN IM U M in c h e s / m m
M A X IM U M in c h e s / m m
.0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0
.0 3 0 / 0 .7 6 .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θJC 17.8 A 55 V 600 W @ TC ≤ 80 °C -65 °C to +250 °C -65 °C to +200 °C 0.2 °C/W
C D E F G H I J K L M N P
.6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES h FE PG ηC POUT IC = 10 m A IC = 25 m A IE = 1.0 m A VCE = 50 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
65 65 3.5...
