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MSC81250M Datasheet Preview

MSC81250M Datasheet

NPN SILICON RF POWER TRANSISTOR

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MSC81250M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC81250M is Designed for
DME/TACAN Applications up to 1150
MHz.
FEATURES:
Internal Input/Output Matching Networks
PG = 6.2 dB at 250 W/1150 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 17.8 A
VCC 55 V
PDISS
600 W @ TC 80 °C
TJ -65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC 0.2 °C/W
PACKAGE STYLE .400 2NL FLG
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
2X B
1
4 x .0 6 2 x 4 5 °
A
.0 2 5 x 4 5 °
ØD
C
F
H
L
2
3
G
I
J
K
E
P
M IN IM U M
in c h e s / m m
.0 2 0 / 0 .5 1
.1 0 0 / 2 .5 4
.3 7 6 / 9 .5 5
.1 1 0 / 2 .7 9
.3 9 5 / 1 0 .0 3
.6 4 0 / 1 6 .2 6
.8 9 0 / 2 2 .6 1
.3 9 5 / 1 0 .0 3
.0 0 4 / 0 .1 0
.0 5 2 / 1 .3 2
.1 1 8 / 3 .0 0
.1 9 3 / 4 .9 0
.4 5 0 / 1 1 .4 3
.1 2 5 / 3 .1 8
MN
M A X IM U M
in c h e s / m m
.0 3 0 / 0 .7 6
.3 9 6 / 1 0 .0 6
.1 3 0 / 3 .3 0
.4 0 7 / 1 0 .3 4
.6 6 0 / 1 6 .7 6
.9 1 0 / 2 3 .1 1
.4 1 5 / 1 0 .5 4
.0 0 7 / 0 .1 8
.0 7 2 / 1 .8 3
.1 3 1 / 3 .3 3
.2 3 0 / 5 .8 4
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 25 mA
RBE = 10
BVEBO
IE = 1.0 mA
ICES VCE = 50 V
hFE VCE = 5.0 V
IC = 1.0 A
www.DaPηtaCGSheet4U.cVoCmC = 50 V
POUT
PIN = 250 W
f = 1025 - 1150 MHz
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
15 120
6.2 6.5
40 38
250 270
UNITS
V
V
V
mA
---
dB
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number MSC81250M
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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MSC81250M Datasheet PDF






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