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MSC81250M - NPN SILICON RF POWER TRANSISTOR

Description

The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz.

Features

  • Internal Input/Output Matching Networks.
  • PG = 6.2 dB at 250 W/1150 MHz.
  • Omnigold™ Metalization System L P M D IM A B M IN IM U M in c h e s / m m N M A X IM U M in c h e s / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4.

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Datasheet Details

Part number MSC81250M
Manufacturer Advanced Semiconductor
File Size 56.15 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet MSC81250M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC81250M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .400 2NL FLG 1 2X B C F Ø D 4 x .0 6 2 x 4 5 ° A .0 2 5 x 4 5 ° 2 3 G H I J K E FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System L P M D IM A B M IN IM U M in c h e s / m m N M A X IM U M in c h e s / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 17.
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