Datasheet Details
| Part number | MSC81250M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 102.16 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81250M_STMicroelectronics.pdf |
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Overview: MSC81250M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORYGOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 6.2 dB GAIN .400 x .
| Part number | MSC81250M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 102.16 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81250M_STMicroelectronics.pdf |
|
|
|
The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions.
Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MSC81250M | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
| Part Number | Description |
|---|---|
| MSC81250M | RF & MICROWAVE TRANSISTORS |
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